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NTGS4141N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
18.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.7
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 7.0 A
21.5
25
m W
V GS = 4.5 V, I D = 6.0 A
30
35
Forward Transconductance
g FS
V DS = 10 V, I D = 7.0 A
30
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
560
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 24 V
115
75
Total Gate Charge
Q G(TOT)
12
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 15 V,
I D = 7.0 A
0.85
1.9
3.0
Total Gate Charge
Q G(TOT)
6.0
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 7.0 A
0.8
1.85
3.0
Gate Resistance
R G
2.8
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
6.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DS = 24 V,
I D = 7.0 A, R G = 3.0 W
15
18
4.0
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.78
0.63
1.0
V
Reverse Recovery Time
t RR
15
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V
dI S /dt = 100 A/ m s, I S = 2.0 A
9.0
6.0
Reverse Recovery Charge
Q RR
8.0
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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